The Czochralski crystal growth furnace is a key piece of equipment for producing high-quality, large-sized single crystals. Its significant technical advantages make it indispensable across numerous fields, from fundamental scientific research to modern information technology and high-end manufacturing

The Czochralski single crystal growth equipment utilizes vacuum suspension melting, with temperatures reaching up to 2100°C. This system includes a high-frequency induction power supply, a high-vacuum chamber, a water-cooled copper crucible (used for suspension melting), and a precision lifting mechanism. Suspension melting prevents sample contamination by the crucible, enabling the production of high-purity metal single crystals.
In a precisely controlled environment, a small "seed" single crystal is brought into contact with the melt of the same material. Then, through slow upward pulling and rotation, the melt continuously grows epitaxially on the seed crystal according to its original lattice structure, ultimately forming a larger single crystal boule.
The Czochralski method has become a mainstream technique for preparing electronic and optical grade single crystals, primarily due to the following significant advantages:
1.High crystal quality
2.Ability to grow large-sized, highly integral single crystals
3.Fast growth speed and high efficiency
4.Visual observation and control of the growth process
5.Ability to control crystal orientation
6.Capability to grow high-melting-point crystals
Application Fields:
1.Microelectronics industry
2.Optoelectronics industry
3.Semiconductor lighting and display
4.Optical components
5.Scientific research
The Czochralski crystal growth furnace is a key piece of equipment for producing high-quality, large-sized single crystals. Its significant technical advantages make it indispensable across numerous fields, from fundamental scientific research to modern information technology and high-end manufacturing.
Technical Parameters:
Product Name | Czochralski Crystal Growth Furnace | |
Product Model | CY-02100°C-CZ-D8001000-T | |
Operating Voltage | 240V AC,0.2-29 kHz,Three-phase | |
Operating Current | 100A | |
Maximum Power Consumption | 50 KW | |
Melting Temperature | Maximum:2100°C (3812°F) | |
Accuracy | < +/- 0.2°C,Utilizes Euro-thermo Temperature Controller | |
Maximum Vacuum Level | 10-3 torr,Mechanical Pump (Included) | |
Vacuum Chamber Dimensions | Ø 500mmx 700mm(H) | |
Water Cooling Method | Cooling Path: Vacuum chamber jacket, Seed rod | |
Water Pressure | 0.13 - 0.18 MPa | |
Water Flow Rate | 60 L/ Minute | |
Controller | Electronic Control Unit (for pulling, rotation, and temperature)
| |
Crystal Puller | Driven by a constant torque DC motor | |
Crystal Pulling Rate | 0.1-20mm/h | |
Maximum Seed Lift/Distance | 400mm | |
Rotation Speed | 0-40 RPM | |
Crucible Lift/Lowering Speed | Manual | |
Maximum Crucible Lift/Distance | 100mm | |
Product Dimensions | Crystal Growth Controller | 880mm(L) x 1250mm(W) x 2850mm(H) |
Control Unit | 680mm(L) x 540mm(W) x 1700mm(H) | |
RF Power Supply | 800mm(L) x 500mm(W) x 1500mm(H) | |
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